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Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits

V. Fortin, S. C. Gujrathi, G. Gagnon, Raymond Gauvin, John F. Currie, L. Ouellet and Y. Tremblay

Article (1999)

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Additional Information: Nom historique du département: Département de génie électrique et de génie informatique
Department: Department of Mechanical Engineering
Department of Electrical Engineering
Department of Computer Engineering and Software Engineering
PolyPublie URL: https://publications.polymtl.ca/28951/
Journal Title: Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena (vol. 17, no. 2)
Publisher: American Vacuum Society
DOI: 10.1116/1.590661
Official URL: https://doi.org/10.1116/1.590661
Date Deposited: 18 Apr 2023 15:22
Last Modified: 05 Apr 2024 11:17
Cite in APA 7: Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. https://doi.org/10.1116/1.590661

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