V. Fortin, S. C. Gujrathi, G. Gagnon, Raymond Gauvin, John F. Currie, L. Ouellet and Y. Tremblay
Article (1999)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Mechanical Engineering Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| PolyPublie URL: | https://publications.polymtl.ca/28951/ |
| Journal Title: | Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena (vol. 17, no. 2) |
| Publisher: | American Vacuum Society |
| DOI: | 10.1116/1.590661 |
| Official URL: | https://doi.org/10.1116/1.590661 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 25 Sep 2024 16:10 |
| Cite in APA 7: | Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. https://doi.org/10.1116/1.590661 |
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