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A word cloud is a visual representation of the most frequently used words in a text or a set of texts. The words appear in different sizes, with the size of each word being proportional to its frequency of occurrence in the text. The more frequently a word is used, the larger it appears in the word cloud. This technique allows for a quick visualization of the most important themes and concepts in a text.
In the context of this page, the word cloud was generated from the publications of the author {}. The words in this cloud come from the titles, abstracts, and keywords of the author's articles and research papers. By analyzing this word cloud, you can get an overview of the most recurring and significant topics and research areas in the author's work.
The word cloud is a useful tool for identifying trends and main themes in a corpus of texts, thus facilitating the understanding and analysis of content in a visual and intuitive way.
Ouellet, L., Ajersch, F., & Ilinca, F. Numerical simulation and validation of flow in a galvanizing bath using a water model [Paper]. Galvatech '04 : 6th international conference on zinc and zinc alloy coated steel sheet. External link
Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. External link
Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. External link
Gujrathi, S. C., Gagnon, G., Fortin, V., Caron, M., Currie, J. F., Ouellet, L., & Tremblay, Y. (1998). Elastic Recoil Detection Using Time-of-Flight for Analysis of Tin/Alsicu/Tin/Ti Contact Metallization Structures. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 138, 661-668. External link
Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (1996, June). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Paper]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Unavailable
Gagnon, G., Gujrathi, S. C., Caron, M., Currie, J. F., Tremblay, Y., Ouellet, L., Biberger, M., & Reynolds, R. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics, 80(1), 188-195. External link
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 2627-2635. External link
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 3502-3508. External link
Caron, M., Gagnon, G., Gauvin, R., Hovington, P., Drouin, D., Currie, J. F., Tremblay, Y., Ouellet, L., Bigerger, M., & Wong, F. (1996, June). An iterative procedure based on Monte Carlo simulation to determine the thickness and composition of VLSI metallization [Paper]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Unavailable
Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. External link