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Atalla, M. R. M., Assali, S., Daligou, G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). Lien externe
Atalla, M. R. M., Kim, Y., Assali, S., Burt, D., Nam, D., & Moutanabbir, O. (2023). Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power. ACS Photonics, 10(5), 1649-1653. Lien externe
Andelic, M., Pofelski, A., Koelling, S., Assali, S., Luo, L., Moutanabbir, O., & Botton, G. (avril 2023). Local Bandgap Measurement of Core/Shell Ge/GeSn Nanowires Employing Electron Energy Loss Spectroscopy in Scanning Transmission Electron Microscopy [Communication écrite]. MRS Spring Meeting, San Francisco, California. Lien externe
Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Vecchio, P. D., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). Lien externe
Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages). Lien externe
Daligou, G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. Lien externe
Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages). Disponible
Kim, Y.-M., Assali, S., Jung, Y., Burt, D., Zhang, L., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Atalla, M. R. M., Ikonic, Z., Tan, C. S., Moutanabbir, O., & Nam, D. (2022). Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications. Meeting abstracts, MA2022-02(32), 1167-1167. Lien externe
Tan, J. Z. J., Burt, D., Kim, Y.-M., Joo, H.-J., Chen, M., Shi, X., Zhang, L., Tan, C. S., Lim, K. Y. T., Quek, E., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (2022). Gesn Bonding Technology for Integrated Laser-on-Chip Photonics. Meeting abstracts, MA2022-02(32), 1177-1177. Lien externe
Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. Lien externe
Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (janvier 2022). 1D photonic crystal GeSn-on-insulator nanobeam laser [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (9 pages). Lien externe
Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. Lien externe
Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 2101213 (7 pages). Lien externe
Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921. Lien externe
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. Lien externe
Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O., & Ray, S. K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). Lien externe
Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168. Lien externe
Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (juillet 2022). Group-IV GeSn nanophotonics [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe
Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. Lien externe
Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (janvier 2022). Improved GeSn microdisk lasers directly sitting on Si [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (7 pages). Lien externe
Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). Lien externe
Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (mai 2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (janvier 2022). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Communication écrite]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States. Lien externe
Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Lien externe
Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe
Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (novembre 2022). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Communication écrite]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages). Lien externe
Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (juillet 2022). Radiative carrier lifetime in GeSn mid-infrared emitters [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe
Abdi, S., Assali, S., Atalla, M. R. M., Koelling, S., Warrender, J. M., & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 105304 (9 pages). Lien externe
Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (janvier 2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain [Communication écrite]. Silicon Photonics XVII. Lien externe
Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages). Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Lien externe
Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Lien externe
Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321. Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. Lien externe
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Lien externe
Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Lien externe
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Lien externe
Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. Lien externe
Assali, S., Bergamaschini, R., Scalise, E., Verheijen, M. A., Albani, M., Dijkstra, A., Li, A., Koelling, S., Bakkers, E. P. A. M., Montalenti, F., & Miglio, L. (2020). Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires. ACS Nano, 14(2), 2445-2455. Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5). Lien externe
Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. Lien externe
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25). Lien externe
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Lien externe
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (mai 2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Communication écrite]. Conference on Lasers and Electro-Optics, San Jose, California. Lien externe
Assali, S., Albani, M., Bergamaschini, R., Verheijen, M., Li, A., Kölling, S., Gagliano, L., Bakkers, E. P. A. M., & Miglio, L. (2019). Strain engineering in Ge/GeSn core/shell nanowires. Applied Physics Letters, 115(11), 5 pages. Lien externe
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Lien externe
Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (septembre 2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(29). Lien externe
Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Lien externe
Assali, S., Lähnemann, J., Vu, T. T. T., Jöns, K. D., Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2017). Crystal phase quantum well emission with digital control. Nano Letters, 17(10), 6062-6068. Disponible
Assali, S., Dijkstra, A., Li, A., Koelling, S., Verheijen, M. A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P. M., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2017). Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays. Nano Letters, 17(3), 1538-1544. Lien externe
Greil, J., Assali, S., Isono, Y., Belabbes, A., Bechstedt, F., Valega Mackenzie, F. O., Silov, A. Y., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2016). Optical properties of strained Wurtzite gallium phosphide nanowires. Nano Letters, 16(6), 3703-3709. Disponible
Kölling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (octobre 2016). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Communication écrite]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Publié dans ECS Transactions, 75(8). Lien externe
Assali, S., Greil, J., Zardo, I., Belabbes, A., de Moor, M. W. A., Koelling, S., Koenraad, P. M., Bechstedt, F., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2016). Optical study of the band structure of wurtzite GaP nanowires. Journal of Applied Physics, 120(4). Lien externe
