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Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals

S. Koelling, R. C. Plantenga, H. I. T. Hauge, Y. Ren, A. Li, M. A. Verheijen, S. Conesa Boj, Simone Assali, P. M. Koenraad and E. P. A. M. Bakkers

Paper (2016)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/36140/
Conference Title: Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting
Conference Location: Honolulu, HI
Conference Date(s): 2016-10-02 - 2016-10-07
Journal Title: ECS Transactions (vol. 75, no. 8)
Publisher: Electrochemical Society
DOI: 10.1149/07508.0751ecst
Official URL: https://doi.org/10.1149/07508.0751ecst
Date Deposited: 18 Apr 2023 15:05
Last Modified: 18 Apr 2023 15:05
Cite in APA 7: Koelling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (2016, October). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Paper]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Published in ECS Transactions, 75(8). https://doi.org/10.1149/07508.0751ecst

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