Sebastian Koelling, Rianne C. Plantenga, Håkon Ikaros T. Hauge, Yizhen Ren, Ang Li, Marcel A. Verheijen, Sonia Conesa Boj, Simone Assali, Paul M. Koenraad and Erik P. A. M. Bakkers
Paper (2016)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/36140/ |
| Conference Title: | Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting |
| Conference Location: | Honolulu, HI |
| Conference Date(s): | 2016-10-02 - 2016-10-07 |
| Journal Title: | ECS Transactions (vol. 75, no. 8) |
| Publisher: | Electrochemical Society |
| DOI: | 10.1149/07508.0751ecst |
| Official URL: | https://doi.org/10.1149/07508.0751ecst |
| Date Deposited: | 18 Apr 2023 15:05 |
| Last Modified: | 08 Apr 2025 12:21 |
| Cite in APA 7: | Koelling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (2016, October). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Paper]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Published in ECS Transactions, 75(8). https://doi.org/10.1149/07508.0751ecst |
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