S. Koelling, R. C. Plantenga, H. I. T. Hauge, Y. Ren, A. Li, M. A. Verheijen, S. Conesa Boj, Simone Assali, P. M. Koenraad and E. P. A. M. Bakkers
Paper (2016)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/36140/ |
| Conference Title: | Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting |
| Conference Location: | Honolulu, HI |
| Conference Date(s): | 2016-10-02 - 2016-10-07 |
| Journal Title: | ECS Transactions (vol. 75, no. 8) |
| Publisher: | Electrochemical Society |
| DOI: | 10.1149/07508.0751ecst |
| Official URL: | https://doi.org/10.1149/07508.0751ecst |
| Date Deposited: | 18 Apr 2023 15:05 |
| Last Modified: | 18 Apr 2023 15:05 |
| Cite in APA 7: | Koelling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (2016, October). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Paper]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Published in ECS Transactions, 75(8). https://doi.org/10.1149/07508.0751ecst |
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