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Optical properties of strained Wurtzite gallium phosphide nanowires

J. Greil, Simone Assali, Y. Isono, A. Belabbes, F. Bechstedt, F. O. Valega Mackenzie, A. Yu. Silov, E. P. A. M. Bakkers and J. E. M. Haverkort

Article (2016)

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Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, ate only weakly allowed by the symmetry of the bands. While efficient luminescence has;been experimentally shown, the nature of the transitions is not yet dear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Gamma(7c) symmetry and not exclusively related to the Gamma(8c) conduction band minimum (CBM). The results emphasize the importance of strongly bound state related emission in the pseudodirect semiconductor WZ GaP and contribute-significantly to the understanding of the optoelectronic properties of this novel material.

Uncontrolled Keywords

Wurtzite semiconductor; strain; localized state; photoluminescence; band structure; symmetry

Subjects: 3100 Physics > 3100 Physics
Department: Department of Engineering Physics
Funders: Austrian Science Fund (FWF), Dutch Organization for Scientific Research
Grant number: J3540-N30, NWO-VICI 700.10.441
PolyPublie URL: https://publications.polymtl.ca/3514/
Journal Title: Nano Letters (vol. 16, no. 6)
Publisher: ACS
DOI: 10.1021/acs.nanolett.6b01038
Official URL: https://doi.org/10.1021/acs.nanolett.6b01038
Date Deposited: 12 May 2023 10:09
Last Modified: 08 Apr 2024 12:23
Cite in APA 7: Greil, J., Assali, S., Isono, Y., Belabbes, A., Bechstedt, F., Valega Mackenzie, F. O., Silov, A. Y., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2016). Optical properties of strained Wurtzite gallium phosphide nanowires. Nano Letters, 16(6), 3703-3709. https://doi.org/10.1021/acs.nanolett.6b01038


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