Lu Luo, David Vlassov, M. R. M. Atalla, Simone Assali, Cédric Lemieux-Leduc, Ziqiang Cai, Sebastian Koelling, Gérard Tanguy Eric Gnato Daligou and Oussama Moutanabbir
Paper (2025)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/72417/ |
| Conference Title: | 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) |
| Conference Location: | Yokohama-shi, Kanagawa, Japan |
| Conference Date(s): | 2025-11-10 - 2025-11-13 |
| Date Deposited: | 10 Feb 2026 08:56 |
| Last Modified: | 10 Feb 2026 09:13 |
| Cite in APA 7: | Luo, L., Vlassov, D., Atalla, M. R. M., Assali, S., Lemieux-Leduc, C., Cai, Z., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (2025, November). GeSn: Insights from Nanoscale Materials and Devices [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. |
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