Documents dont l'auteur est "Gujrathi, S. C."

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Nombre de documents: 25

2009

Amassian, A., Dudek, M., Zabeida, O., Gujrathi, S. C., Sapieha, J.-E., & Martinu, L. (2009). Oxygen incorporation and charge donor activation via subplantation during growth of indium tin oxide films. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 27(2), 362-366. Lien externe

2008

Benkahoul, M., Robin, P., Gujrathi, S. C., Martinu, L., & Sapieha, J.-E. (2008). Microstructure and Mechanical Properties of Cr-Si-N Coatings Prepared by Pulsed Reactive Dual Magnetron Sputtering. Surface and Coatings Technology, 202(16), 3975-3980. Lien externe

2001

Larouche, S., Amassian, A., Gujrathi, S. C., Sapieha, J.-E., & Martinu, L. (janvier 2001). Multilayer and inhomogeneous optical filters fabricated by PECVD using titanium dioxide and silicon dioxide [Communication écrite]. 44th Annual Technical Conference, Philadelphia, PA, United States. Non disponible

2000

D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R. A., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104. Lien externe

1999

Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. Lien externe

Hajek, V., Rusnak, K., Vlcek, J., Martinu, L., & Gujrathi, S. C. (1999). Influence of substrate bias voltage on the properties of CNₓ films prepared by reactive magnetron sputtering. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 17(3), 899-908. Lien externe

1998

Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. Lien externe

Gujrathi, S. C., Gagnon, G., Fortin, V., Caron, M., Currie, J. F., Ouellet, L., & Tremblay, Y. (1998). Elastic Recoil Detection Using Time-of-Flight for Analysis of Tin/Alsicu/Tin/Ti Contact Metallization Structures. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 138, 661-668. Lien externe

Sobrinho, A. S. D., Schühler, N., Sapieha, J.-E., Wertheimer, M. R., Andrews, M., & Gujrathi, S. C. (1998). Plasma-Deposited Silicon Oxide and Silicon Nitride Films on Poly(Ethylene Terephthalate): a Multitechnique Study of the Interphase Regions. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(4), 2021-2030. Lien externe

Gujrathi, S. C., Roorda, S., D'Arcy, J. G., Pflueger, R. L., Desjardins, P., Petrov, I., & Greene, J. E. (1998). Quantitative compositional depth profiling of Si₁₋ₓ₋yGeₓCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, 654-660. Lien externe

1996

Poitras, D., Leroux, P., Sapieha, J.-E., Gujrathi, S. C., & Martinu, L. (1996). Characterization of homogeneous and inhomogeneous Si-based optical coatings deposited in dual-frequency plasma. Optical Engineering, 35(9), 2693-2699. Lien externe

Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Oueller, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of a TiN anti-reflecting coating on the performance of Ti/TiN/AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible

Ouellet, O. L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., & Reynolds, R. (1996). The effect of an oxygen plasma exposure on the reliability of a ti/tin contact metallization. Journal of Applied Physics, 79(8, pt. 1), 4438-4443. Lien externe

Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible

Gagnon, G., Gujrathi, S. C., Caron, M., Currie, J. F., Tremblay, Y., Ouellet, L., Biberger, M., & Reynolds, R. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics, 80(1), 188-195. Lien externe

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 2627-2635. Lien externe

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 3502-3508. Lien externe

Gujrathi, S. C., Poitras, D., Sapieha, J.-E., & Martinu, L. (1996). ERD-TOF characterization of silicon-compound multilayer and graded-index optical coatings. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 118(1-4), 560-565. Lien externe

1994

Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. Lien externe

Poitras, D., Leroux, P., Sapieha, J.-E., Gujrathi, S. C., & Martinu, L. (mai 1994). Characterization of silicon-compound multilayer and graded-index optical coatings deposited by dual-frequency plasma [Communication écrite]. 37th Annual Technical Conference, Boston, MA, USA. Non disponible

Gruning, U., Gujrathi, S. C., Poulin, S., Diawara, Y., & Yelon, A. (1994). Remote oxygen-containing hydrogen plasma treatment of porous silicon. Journal of Applied Physics, 75(12), 8075-9. Lien externe

1992

Martinu, L., Raveh, A., Domingue, A., Bertrand, L., Sapieha, J.-E., Gujrathi, S. C., & Wertheimer, M. R. (1992). Hard carbon films deposited under high ion flux. Thin Solid Films, 208(1), 42-47. Lien externe

Raveh, A., Martinu, L., Gujrathi, S. C., Sapieha, J.-E., & Wertheimer, M. R. (1992). Structure-property relationships in dual-frequency plasma deposited hard a-C : H films. Surface and Coatings Technology, 53(3), 275-282. Lien externe

1989

Blain, S., Sapieha, J.-E., Wertheimer, M. R., & Gujrathi, S. C. (1989). Silicon oxynitride from microwave plasma: fabrication and characterization. Canadian Journal of Physics, 67(4), 190-194. Lien externe

1988

Bustarret, E., Bensouda, M., Habrard, M. C., Bruyère, J. C., Poulin, S., & Gujrathi, S. C. (1988). Configurational statistics in a-SixNyHz alloys : a quantitative bonding analysis. Physical Review B-Condens Matter and Materials Physics, 38(12), 8171-8184. Lien externe

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