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Documents dont l'auteur est "Lavoie, C."

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Nombre de documents: 20

2011

Gaudet, S., Desjardins, P., & Lavoie, C. (2011). The thermally-induced reaction of thin Ni films with Si : Effect of the substrate orientation. Journal of Applied Physics, 110(11). Lien externe

2010

Gaudet, S., Coia, C., Desjardins, P., & Lavoie, C. (2010). Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance. Journal of Applied Physics, 107(9), 093515-093515. Lien externe

2009

Guihard, M., Turcotte-Tremblay, P., Gaudet, S., Coia, C., Roorda, S., Desjardins, P., Lavoie, C., & Schiettekatte, F. (2009). Controlling nickel silicide phase formation by Si implantation damage. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 267(8-9), 1285-1289. Lien externe

Knaepen, W., Gaudet, S., Detavernier, C., Van Meirhaeghe, R. L., Sweet, J. J., & Lavoie, C. (2009). In situ x-ray diffraction study of metal induced crystallization of amorphous germanium. Journal of Applied Physics, 105(8), 083532-083532. Lien externe

2006

Gaudet, S., Lavoie, C., Detavernier, C., & Desjardins, P. (mai 2006). Germanide phase formation and texture [Communication écrite]. 2006 International SiGe Technology and Device Meeting, 15-17 May 2006, Princeton, NJ, USA. Lien externe

Gaudet, S., Detavernier, C., Lavoie, C., & Desjardins, P. (2006). Reaction of thin Ni films with Ge: phase formation and texture. Journal of Applied Physics, 100(3), 034306-1-034306-10. Lien externe

Gaudet, S., Detavernier, C., Kellock, A. J., Desjardins, P., & Lavoie, C. (2006). Thin film reaction of transition metals with germanium. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(3), 474-485. Lien externe

2005

Coia, C., Lavoie, C., D'Heurle, F. M., Detavernier, C., Desjardins, P., & Kellock, A. J. (mai 2005). Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence [Communication écrite]. 207th Meeting of the Electrochemical Society, Québec, Canada. Lien externe

Lavoie, C., Coia, C., D'heurle, F. M., Detavernier, C., Cabral, C., Desjardins, P., & Kellock, A. J. (juillet 2004). Reactive Diffusion in the Ni-Si System: Phase Sequence and Formation of Metal-Rich Phases [Communication écrite]. Diffusion in Materials: Dimat 2004 : 6th International Conference on Diffusion in Materials, Cracow, Poland. Lien externe

2002

Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (mai 2002). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Communication écrite]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. Lien externe

2001

Chun, J. S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., & Greene, J. E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 19(5), 2207-2216. Lien externe

Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. Lien externe

Chun, J. S., Desjardins, P., Lavoie, C., Shin, C. S., Cabral, C., Petrov, I., & Greene, J. E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), 7841-7845. Lien externe

Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. Lien externe

1992

Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., & Desjardins, P. (1992). Modeling KrF excimer laser induced deposition of titanium from titanium tetrachloride. Applied Surface Science, 54, 52-55. Lien externe

1991

Lavoie, C., Meunier, M., Izquierdo, R., Boivin, S., & Desjardins, P. (1991). Large area excimer laser induced deposition of titanium from titanium tetrachloride. Applied Physics A Solids and Surfaces, 53(4), 339-342. Lien externe

Lavoie, C., Meunier, M., Boivin, S., Izquierdo, R., & Desjardins, P. (1991). Profile of titanium lines produced by excimer laser direct writing on lithium niobate. Journal of Applied Physics, 70(4), 2343-2347. Lien externe

1990

Izquierdo, R., Lavoie, C., & Meunier, M. (1990). Excimer laser direct writing of titanium lines on lithium niobate. Applied Physics Letters, 57(7), 647-647. Lien externe

Meunier, M., Lavoie, C., Boivin, S., Izquierdo, R., Desjardins, P., & Najafi, S. I. (novembre 1990). KrF excimer laser direct writing of titanium lines: modeling and application to the fabrication of Ti:Linbo₃ waveguides [Communication écrite]. 1990 MRS Fall Meeting, Boston, Mass.. Publié dans MRS Proceedings, 201. Lien externe

1989

Izquierdo, R., Lavoie, C., & Meunier, M. (novembre 1989). KRF excimer laser deposition of titanium from TiCl₄ [Communication écrite]. 1989 MRS Fall Meeting, Boston, Mass.. Publié dans MRS Proceedings, 158. Lien externe

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