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Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe
Zhao, Y. G., Zou, Y. H., Wang, J. J., Qin, Y. D., Huang, X. L., Masut, R. A., & Bensaada, A. (1998). Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells. Applied Physics Letters, 72(1), 97-99. Lien externe
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R. A., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. Lien externe
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Cléton, F., Sieber, B., Bensaada, A., Masut, R. A., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845. Lien externe
Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836. Lien externe
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. Lien externe
Cova, P., Masut, R. A., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11. Lien externe
Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. Lien externe
Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (avril 1996). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Communication écrite]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. Lien externe
Singh, A., Masut, R. A., & Bensaada, A. (septembre 1994). Characterization of interface states in thin epitaxial film In₀.₇₅Ga₀.₂₅P/Ag diodes [Communication écrite]. Surfaces, vacuum and their applications. Publié dans AIP Conference Proceedings, 378(1). Lien externe
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Gent, Belgium. Non disponible
