Documents publiés en "2004"

A

Amassian, A., Desjardins, P., & Martinu, L. (janvier 2004). Dynamics of surface modifications during optical coating deposition in plasma-assisted processes [Communication écrite]. Optical Interference Coatings, Washington, DC, USA. Lien externe

Amassian, A., Desjardins, P., & Martinu, L. (2004). Study of TiO₂ film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry. Thin Solid Films, 447-448(3), 40-45. Lien externe

Amassian, A., Verhnes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (2004). Interface engineering during plasma-enhances chemical vapor deposition of porous/dense SiN1.3 optical multilayers. Thin Solid Films, 469-470, 47-53. Lien externe

Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (janvier 2004). Interface engineering of porous/dense multilayers of SiN1.3: in situ real-time spectroscopic ellipsometry study [Communication écrite]. 47th Society of Vacuum Coaters Technical Conference. Lien externe

Amassian, A., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (janvier 2004). Study of the growht and interface engineering of dense/porouss SiN1.3 optical coatings by real-time spectroscopic ellipsometry [Communication écrite]. Optical Interference Coatings, Washington, DC, USA. Lien externe

B

Beaudry, J.-N., Masut, R. A., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. Lien externe

Bentoumi, G., Timoshevskii, V., Madini, N., Cote, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5-35315.1-35315.5. Lien externe

D

Duval, O., Lafrance, L. P., Savaria, Y., & Desjardins, P. (août 2004). An Integrated Test Platform for Nanostructure Electrical Characterization [Communication écrite]. International Conference on Mems, Nano and Smart Systems (ICMENS 2004), Banff, Canada. Lien externe

G

Girard, J. F., Dion, C., Desjardins, P., Allen, C. N., Poole, P. J., & Raymond, S. (2004). Tuning of the Electronic Properties of Self-Assembled Inas/Inp(001) Quantum Dots by Rapid Thermal Annealing. Applied Physics Letters, 84(17), 3382-3384. Lien externe

S

Shtinkiv, N., Desjardins, P., & Masut, R. A. (juillet 2004). Localized and extended states in semiconductor quantum wells with wire-like interface Islands [Communication écrite]. 27th international conference on the physics of semiconductors, Flagstaff, Arizona, USA. Lien externe

Shtinkov, N., Desjardins, P., Masut, R. A., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302. Lien externe

Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe

T

Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. Lien externe

W

Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R. A., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. Lien externe