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Amassian, A., Larouche, S., Sapieha, J.-E., Desjardins, P., & Martinu, L. (avril 2002). In situ ellipsometric study of the initial growth stages of a TiO₂ by PECVD [Communication écrite]. 45th Annual Technical Conference of the Society of Vacuum Coaters, Lake Buena Vista, FL, USA. Lien externe
Amassian, A., Larouche, S., Vernhes, R., Sapieha, J.-E., Desjardins, P., & Martinu, L. (mai 2002). Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry [Communication écrite]. SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging (Opto Canada 2002), Ottawa, Ont., Can.. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. Lien externe
Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (mai 2002). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Communication écrite]. Rapid thermal and other short-time processing technologies III Electrochemical Society, Philadelphia, PA, USA. Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Kim, Y. W., Desjardins, P., & Greene, J. E. (2002). C Lattice Site Distributions in Metastable Ge₁₋yCy Alloys Grown on Ge(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(6), 3644-3652. Lien externe
Park, S. Y., D'Arcy-Gall, J., Gall, D., Soares, J. A. N. T., Kim, Y.-W., Kim, H., Desjardins, P., Greene, J. E., & Bishop, S. G. (2002). Carbon Incorporation Pathways and Lattice Sites in Si₁₋yCy Alloys Grown on Si(001) by Molecular-Beam Epitaxy. Journal of Applied Physics, 91(9), 5716-5727. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). Lien externe
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe
Tchebotareva, A., Brebner, J. L., Roorda, S., Desjardins, P., & White, C. W. (2002). Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix. Journal of Applied Physics, 92(8), 4664-4671. Lien externe
