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Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. A. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. Lien externe
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. A. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. Lien externe
Cliche, L., Roorda, S., & Masut, R. A. (1994). Persistent room-temperature relaxation of InP amorphized and compacted by MeV ion beams. Applied Physics Letters, 65(14), 1754-1756. Lien externe
Cova, P., Masut, R. A., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11. Lien externe
Grimal, O., Masson, D. P., Bertrand, L., & Yelon, A. (1994). Evidence of weak phonon coupling to the Si-H stretching modes in a-Si:H. Physical review. B, Condensed matter, 49(15), 10242-10247. Lien externe
Martinu, L., Sapieha, J.-E., Küttel, O. M., Raveh, A., & Wertheimer, M. R. (novembre 1993). Critical ion energy and ion flux in the growth of films by plasma-enhanced chemical-vapor deposition [Communication écrite]. 40th National Symposium of the American Vacuum Society, Orlando, FL. Publié dans Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 12(4, pt. 1). Lien externe
Meunier, M., Desjardins, P., Izquierdo, R., Tabbal, M., & Suys, M. (1994). Excimer laser for in situ processing in microelectronics. Dans Laude, L. D. (édit.), Excimer lasers : The tools, fundamentals of their interactions with matter, field of applications (p. 319-338). Lien externe
Suys, M., Izquierdo, R., Sacher, E., & Meunier, M. (octobre 1994). Excimer laser chemical vapor deposition of copper from Cu(hfac) (TMVS) [Communication écrite]. Advanced Metallization for ULSI, Austin, Texas, USA. Non disponible
Tran, C. A., Graham, J. T., Brebner, J. L., & Masut, R. A. (1994). Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials, 23(12), 1291-1296. Lien externe
Wertheimer, M. R., & Moisan, M. (1994). Processing of electronic materials by microwave plasma. Pure and Applied Chemistry, 66(6), 1343-1352. Lien externe
