Ludvik Martinu, Jolanta-Ewa Sapieha
, O. M. Küttel, A. Raveh and Michael R. Wertheimer
Paper (1993)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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Research Center: | GCM - Thin Film Physics and Technology Research Group |
PolyPublie URL: | https://publications.polymtl.ca/33035/ |
Conference Title: | 40th National Symposium of the American Vacuum Society |
Conference Location: | Orlando, FL |
Conference Date(s): | 1993-11-15 - 1993-11-19 |
Journal Title: | Journal of vacuum science and technology. A, Vacuum, surfaces, and films (vol. 12, no. 4, pt. 1) |
Publisher: | American Vacuum Society |
DOI: | 10.1116/1.579322 |
Official URL: | https://doi.org/10.1116/1.579322 |
Date Deposited: | 18 Apr 2023 15:25 |
Last Modified: | 25 Sep 2024 16:15 |
Cite in APA 7: | Martinu, L., Sapieha, J.-E., Küttel, O. M., Raveh, A., & Wertheimer, M. R. (1993, November). Critical ion energy and ion flux in the growth of films by plasma-enhanced chemical-vapor deposition [Paper]. 40th National Symposium of the American Vacuum Society, Orlando, FL. Published in Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 12(4, pt. 1). https://doi.org/10.1116/1.579322 |
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