Documents dont l'auteur est "Assali, Simone"

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Nombre de documents: 36

2026

Daligou, G. T. E. G., Atalla, M., Lemieux-Leduc, C., Nomezine, A., Assali, S., Soref, R., & Moutanabbir, O. (2026). Mid-Infrared Thermal Radiation Harvesting Using Uncooled Narrow Bandgap GeSn Thermophotovoltaic Cell. ACS Photonics, 13(18). Lien externe

Cai, Z., Lemieux-Leduc, C., Atalla, M. R. M., Luo, L., Daligou, G. T. E. G., Assali, S., & Moutanabbir, O. (2026). Polarization-sensitive GeSn mid-infrared membrane photodetectors with integrated plasmonic metasurface. APL Photonics, 11(3), 036109 (9 pages). Lien externe

2025

Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Rotaru, N., Brodeur, J., Kéna-Cohen, S., Moutanabbir, O., & Peter, Y.-A. (2025). Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator. ACS Photonics, 12(11), 6343-6351. Lien externe

Luo, L., Daligou, G. T. E. G., Koelling, S., Assali, S., & Moutanabbir, O. (2025). GeSn Nanowire Mid-Infrared Photodetectors and Spectrometers. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(31), 1600-1600. Lien externe

Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe

Kim, Y., Assali, S., Ge, J., Koelling, S., Luo, M., Luo, L., Joo, H.-J., Zi Jing Tan, J., Shi, X., Ikonic, Z., Li, H., Moutanabbir, O., & Nam, D. (2025). Mid-infrared group IV nanowire laser. Science Advances, 11(20), eadt6723 (7 pages). Disponible

Luo, L., Vlassov, D., Atalla, M. R. M., Assali, S., Lemieux-Leduc, C., Cai, Z., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (novembre 2025). GeSn: Insights from Nanoscale Materials and Devices [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Yu, G., Joo, H., Liu, J., Chen, M., Kim, Y., Assali, S., Sirtori, C., Todorov, Y., Moutanabbir, O., & Nam, D. (décembre 2025). GeSnOI Lasers for Laser-Integrated Photonic Chips [Communication écrite]. International Electron Devices Meeting (IEDM 2025), San Francisco, CA, USA (4 pages). Lien externe

2024

Koelling, S., Assali, S., Nadal, G., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2024). Tracking of atomic planes in atom probe tomography. Journal of Applied Physics, 136(24), 1-11. Disponible

Moutanabbir, O., Luo, L., Kim, Y., Assali, S., Atalla, M. R. M., Joo, H.-J., Koelling, S., Chen, M., Shi, X., Burt, D., & Nam, D. (2024). Group IV Mid-Infrared Optoelectronics Leveraging Nanoscale Growth Substrates. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2328-2328. Lien externe

Assali, S., Attiaoui, A., Del Vecchio, P., Rotaru, N., & Moutanabbir, O. (2024). Engineering Sn-Based Group IV Quantum Materials. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2323-2323. Lien externe

Atalla, M. R. M., Lemieux-Leduc, C., Assali, S., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon. APL Photonics, 9(5), 056103 (8 pages). Disponible

Bellemare, C., Atalla, M. R. M., Daoust, P., Koelling, S., Assali, S., & Moutanabbir, O. (janvier 2024). Silicon-integrated SWIR and MWIR GeSn photoconductive devices [Présentation]. Dans SPIE OPTO, 2024, San Francisco, California, United States. Lien externe

2023

Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Daoust, P., Daligou, G. T. E. G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (novembre 2023). Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared [Communication écrite]. IEEE Photonics Conference (IPC 2023), Orlando, FL, USA (2 pages). Lien externe

Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages). Disponible

Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Daoust, P., Del Vecchio, P., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). Lien externe

2022

Shi, X., Burt, D., Kim, Y., Joo, H.-J., Tan, J. P. L., Chen, M., Jung, Y., Zhang, L., Seng Tan, C., Lee, C.-W., Cho, Y.-H., Ikonić, Z., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (juillet 2022). GeSn Laser Technologies for Integrated Photonics [Communication écrite]. Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe

Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168. Lien externe

Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. Lien externe

Attiaoui, A., Assali, S., Luo, L., Daligou, G. T. E. G., Atalla, M., Koelling, S., & Moutanabbir, O. (juillet 2022). Group-IV GeSn nanophotonics [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe

Daligou, G. T. E. G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (juillet 2022). Radiative carrier lifetime in GeSn mid-infrared emitters [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe

Atalla, M., Assali, S., Koelling, S., Daligou, G. T. E. G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe

Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Lien externe

Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). Lien externe

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G. T. E. G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR photodetection in all-Group IV core/shell nanowires. ACS Photonics, 9(3), 914-921. Lien externe

2021

Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Lien externe

Attiaoui, A., Bouthillier, É., Daligou, G. T. E. G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). Lien externe

Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe

2020

Assali, S., Attiaoui, A., Atalla, M., Dijkstra, A., Kumar, A., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe

Assali, S., Attiaoui, A., Abdi, S., Atalla, M., Bouthillier, É., Luo, L., Groell, L., Nicolas, J., Mukherjee, S., Koelling, S., & Moutanabbir, O. (février 2020). SWIR and MIR emission and detection using an all-group IV platform [Communication écrite]. SPIE OPTO 2020, San Francisco, CA, USA. Lien externe

2019

Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Lien externe

Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors: A versatile silicon-compatible platform [Résumé]. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7), Kyoto, Japan (1 page). Lien externe

2017

Assali, S., Lähnemann, J., Vu, T. T. T., Jöns, K. D., Gagliano, L., Verheijen, M. A., Akopian, N., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2017). Crystal phase quantum well emission with digital control. Nano Letters, 17(10), 6062-6068. Disponible

Assali, S., Dijkstra, A., Li, A., Koelling, S., Verheijen, M. A., Gagliano, L., von den Driesch, N., Buca, D., Koenraad, P. M., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2017). Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays. Nano Letters, 17(3), 1538-1544. Lien externe

2016

Koelling, S., Plantenga, R. C., Ikaros T. Hauge, H., Ren, Y., Li, A., Verheijen, M. A., Conesa-Boj, S., Assali, S., Koenraad, P. M., & A. M. Bakkers, E. P. (2016). Impurity and Defect Monitoring in Hexagonal Si and SiGe Nanocrystals. ECS Meeting Abstracts, MA2016-02(30), 1949-1949. Lien externe

Greil, J., Assali, S., Isono, Y., Belabbes, A., Bechstedt, F., Valega Mackenzie, F. O., Silov, A. Y., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2016). Optical properties of strained Wurtzite gallium phosphide nanowires. Nano Letters, 16(6), 3703-3709. Disponible

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