Impurity and Defect Monitoring in Hexagonal Si and SiGe Nanocrystals

Sebastian Koelling, Rianne C. Plantenga, Håkon Ikaros T. Hauge, Yizhen Ren, Ang Li, Marcel A. Verheijen, Sònia Conesa-Boj, Simone Assali, P. M. Koenraad and Erik P. A. M. Bakkers

Article (2016)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/79685/
Journal Title:	ECS Meeting Abstracts (vol. MA2016-02, no. 30)
Publisher:	Institute of Physics
DOI:	10.1149/ma2016-02/30/1949
Official URL:	https://doi.org/10.1149/ma2016-02/30/1949
Date Deposited:	29 Jun 2026 16:11
Last Modified:	29 Jun 2026 16:11

Cite in APA 7:	Koelling, S., Plantenga, R. C., Ikaros T. Hauge, H., Ren, Y., Li, A., Verheijen, M. A., Conesa-Boj, S., Assali, S., Koenraad, P. M., & A. M. Bakkers, E. P. (2016). Impurity and Defect Monitoring in Hexagonal Si and SiGe Nanocrystals. ECS Meeting Abstracts, MA2016-02(30), 1949-1949. https://doi.org/10.1149/ma2016-02/30/1949
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