 | Monter d'un niveau |
Brodeur, J., Rahier, E., Chartray-Pronovost, M., Robert, É., Moutanabbir, O., & Kéna-Cohen, S. (2025). Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact. [Commentaire ou lettre]. PubMed, 7 pages. Lien externe
Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2025). Second-order nonlinear generation for electric fields propagating in two spatial dimensions. Journal of Physics D Applied Physics. Lien externe
Carnio, B., Ciarniello, G. C., Moutanabbir, O., & Elezzabi, A. Y. (2025). Backward electro-optic detection for narrowband terahertz time-domain spectroscopy. IEEE Transactions on Terahertz Science and Technology, 1-8. Lien externe
Carnio, B., Zhang, M., Moutanabbir, O., & Elezzabi, A. Y. (2025). Coherent Electric Field Detection Methodology for Phase-Corrected Electro-Optic Sampling. Journal of Infrared Millimeter and Terahertz Waves, 46(5), 28 (12 pages). Lien externe
Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe
Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (novembre 2025). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Del Vecchio, P., Bosco, S., Loss, D., & Moutanabbir, O. (novembre 2025). Spin-orbit interactions of light holes in Ge/GeSn planar systems [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Gradwohl, K.-P., Cvitkovich, L., Lu, C.-H., Koelling, S., Oezkent, M., Liu, Y., Waldhör, D., Grasser, T., Niquet, Y.-M., Albrecht, M., Richter, C., Moutanabbir, O., & Martin, J. (2025). Enhanced nanoscale Ge concentration oscillations in Si/SiGe quantum well through controlled segregation [Commentaire ou lettre]. Nano Letters, 25(11), 4204-4210. Disponible
Kaul, P. B., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción, O., Ikonić, Z., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (2025). GeSn quantum wells as a platform for spin-resolved hole transport. Communications Materials, 6(1), 216. Lien externe
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (novembre 2025). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (octobre 2025). Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells [Résumé]. ASPIRE Workshop on Quantum and Topological Materials (ASPIRE 2025), Sendai, Japan (2 pages). Lien externe
Kim, Y., Assali, S., Ge, J., Koelling, S., Luo, M., Luo, L., Joo, H.-J., Zi Jing Tan, J., Shi, X., Ikonic, Z., Li, H., Moutanabbir, O., & Nam, D. (2025). Mid-infrared group IV nanowire laser. Science Advances, 11(20), eadt6723 (7 pages). Disponible
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Rotaru, N., Brodeur, J., Kéna-Cohen, S., Moutanabbir, O., & Peter, Y.-A. (2025). Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator. ACS Photonics, 12(11), 6343-6351. Lien externe
Luo, L., Daligou, G. T. E. G., Koelling, S., Assali, S., & Moutanabbir, O. (2025). GeSn Nanowire Mid-Infrared Photodetectors and Spectrometers. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(31), 1600-1600. Lien externe
Luo, L., Vlassov, D., Atalla, M. R. M., Assali, S., Lemieux-Leduc, C., Cai, Z., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (novembre 2025). GeSn: Insights from Nanoscale Materials and Devices [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Montpetit, L., Singh, S., Rahier, E., Atalla, M., & Moutanabbir, O. (novembre 2025). Annealing of Au-CdZnTe Detectors: Thermal Budget Constraints and Interfacial Stability [Communication écrite]. Nuclear Science Symposium (NSS 2025), Medical Imaging Conference (MIC 2025) and Room Temperature Semiconductor Detector Conference (RTSD 2025), Yokohama, Japan (1 page). Lien externe
Ndiaye, E. B., Omambac, K., Koelling, S., Rahier, E., Michel, S. J., Moutanabbir, O., & Dupont-Ferrier, E. (novembre 2025). Sb Delta Doping of Isotopically Purified Epitaxial ²⁸Si for Nuclear High-Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Rahier, E., Koelling, S., Singh, S., Montpetit, L., & Moutanabbir, O. (novembre 2025). Tracking the Three-Dimensional Distribution of Growth Impurities in Cd₀.₉Zn₀.₁Te Single Crystal [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (novembre 2025). Direct Bandgap Group IV Hole Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (2025). Hole spin in direct bandgap germanium-tin quantum dot. Physical review B, 112(12), 125428 (12 pages). Lien externe
Singh, S., Montpetit, L., Rahier, E., Atalla, M., Koelling, S., & Moutanabbir, O. (novembre 2025). Interpixel Passivation of CZT Detectors via ALD-Deposited Al₂O₃ [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe
Yu, G., Joo, H., Liu, J., Chen, M., Kim, Y., Assali, S., Sirtori, C., Todorov, Y., Moutanabbir, O., & Nam, D. (décembre 2025). GeSnOI Lasers for Laser-Integrated Photonic Chips [Communication écrite]. International Electron Devices Meeting (IEDM 2025), San Francisco, CA, USA (4 pages). Lien externe
