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Sb Delta Doping of Isotopically Purified Epitaxial ²⁸Si for Nuclear High-Spin Qubits

El Bachir Ndiaye, Karim Omambac, Sebastian Koelling, Eloïse Rahier, Simon Jean Michel, Oussama Moutanabbir and Eva Dupont-Ferrier

Paper (2025)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/72413/
Conference Title: 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025)
Conference Location: Yokohama-shi, Kanagawa, Japan
Conference Date(s): 2025-11-10 - 2025-11-13
Date Deposited: 10 Feb 2026 09:09
Last Modified: 10 Feb 2026 09:14
Cite in APA 7: Ndiaye, E. B., Omambac, K., Koelling, S., Rahier, E., Michel, S. J., Moutanabbir, O., & Dupont-Ferrier, E. (2025, November). Sb Delta Doping of Isotopically Purified Epitaxial ²⁸Si for Nuclear High-Spin Qubits [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan.

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