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Documents publiés en "2018"

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Nombre de documents: 16

Article de revue

Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Lien externe

Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Lien externe

Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. Lien externe

Fortin-Deschenes, M., & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. Lien externe

Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. Lien externe

Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Lien externe

Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Lien externe

Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. Lien externe

Sahamir, S. R., Said, S. M., Sabri, M. F. M., Mahmood, M. S., Bin Kamarudin, M. A., & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. Lien externe

Résumé

Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (septembre 2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(29). Lien externe

Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Moutanabbir, O., & Mukherjee, S. (septembre 2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Chapitre de livre

Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. Dans Fan, C., & Zhao, Z. (édit.), Synchrotron radiation in materials science (239-274). Lien externe

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