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Documents publiés en "1998"

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Nombre de documents: 13

A

Ababou, Y., Masut, R. A., & Yelon, A. (1998). Low-Pressure Metalorganic Vapor Phase Epitaxy of Inp on (111) Substrates. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 790-793. Lien externe

Ait-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. A. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. Lien externe

Ait-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. A. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160. Lien externe

Allard, M., Boudreau, M., & Masut, R. A. (juillet 1998). Thermal modelling and temperature measurements in optoelectronic waveguide devices [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe

C

Cova, P., Singh, A., Medina, A., & Masut, R. A. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), 477-485. Lien externe

D

Desjardins, P., Isnard, L., Marchand, H., & Masut, R. A. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. Lien externe

F

Fafard, S., McCaffrey, J., Feng, Y., Allen, C. N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., & Masut, R. A. (juillet 1998). Towards quantum dot laser diodes emitting at 1.5 μm [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe

G

Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. A. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. Lien externe

Y

Yip, R. Y. F., Desjardins, P., Isnard, L., Ait-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe

Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe

Z

Zhao, Y. G., Qin, Y. D., Huang, X. L., Wang, J. J., Zou, Y. H., Masut, R. A., & Beaudoin, M. (1998). Photoexcited Carrier Diffusion Dependence of Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained- Multiple-Quantum Wells. Solid State Communications, 105(6), 393-397. Lien externe

Zhao, Y. G., Zou, Y. H., Huang, X. L., Wang, J. J., Qin, Y. D., Masut, R. A., & Beaudoin, M. (1998). Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained-Multiple-Quantum Wells. Journal of Applied Physics, 83(8), 4430-4435. Lien externe

Zhao, Y. G., Zou, Y. H., Wang, J. J., Qin, Y. D., Huang, X. L., Masut, R. A., & Bensaada, A. (1998). Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells. Applied Physics Letters, 72(1), 97-99. Lien externe

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