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Documents dont l'auteur est "Meng, Xiang"

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Nombre de documents: 7

B

Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. Lien externe

D

De Oliveira Silva, G. V., Subramanian, A., Meng, X., Zhang, S., Barbosa, M. S., Baloukas, B., Chartrand, D., Pérez, J. C. G., Orlandi, M. O., Soavi, F., Cicoira, F., & Santato, C. (2019). Tungsten Oxide Ion-Gated Phototransistors using Ionic Liquid and Aqueous Gating Media. Journal of Physics D: Applied Physics, 52(30), 10 pages. Lien externe

M

Meng, X. (2017). Electrolyte-Gated Tungsten Oxide Transistors: Fabrication, Working Mechanism, Device Performance [Thèse de doctorat, École Polytechnique de Montréal]. Disponible

Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. Journal of Physical Chemistry C, 119(37), 21732-21738. Lien externe

Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Erratum : Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. The Journal of Physical Chemistry C, 119(40), 23292-23292. Lien externe

V

Valitova, I., Kumar, P., Meng, X., Soavi, F., Santato, C., & Cicoira, F. (2016). Photolithographically patterned TiO₂ films for electrolyte-gated transistors. ACS Applied Materials & Interfaces, 8(23), 14855-14862. Lien externe

Z

Zhang, S., Chen, Y., Liu, H., Wang, Z., Ling, H., Wang, C., Ni, J., Saltik, B. C., Wang, X., Meng, X., Kim, H.-J., Baidya, A., Ahadian, S., Ashammakhi, N., Dokmeci, M. R., Travas-Sejdic, J., & Khademhosseini, A. (2019). Room-Temperature-Formed PEDOT:PSS Hydrogels Enable Injectable, Soft, and Healable Organic Bioelectronics. Advanced Materials, 32(1), e1904752 (7 pages). Lien externe

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