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Erratum : Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance

Xiang Meng, Francis Quenneville, Frédéric Venne, Eduardo Di Mauro, Dilek Işık, Martin Barbosa, Yves Drolet, Marta M. Natile, Dominic Rochefort, Francesca Soavi and Clara Santato

Article (2015)

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PolyPublie URL: https://publications.polymtl.ca/55890/
Journal Title: The Journal of Physical Chemistry C (vol. 119, no. 40)
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acs.jpcc.5b09089
Official URL: https://doi.org/10.1021/acs.jpcc.5b09089
Date Deposited: 11 Oct 2023 15:49
Last Modified: 05 Apr 2024 12:02
Cite in APA 7: Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Erratum : Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. The Journal of Physical Chemistry C, 119(40), 23292-23292. https://doi.org/10.1021/acs.jpcc.5b09089

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