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Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance

Xiang Meng, Francis Quenneville, Frédéric Venne, Eduardo Di Mauro, Dilek Işık, Martin Barbosa, Yves Drolet, Marta M. Natile, Dominic Rochefort, Francesca Soavi and Clara Santato

Article (2015)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/34396/
Journal Title: Journal of Physical Chemistry C (vol. 119, no. 37)
Publisher: American Chemical Society (ACS)
DOI: 10.1021/acs.jpcc.5b06777
Official URL: https://doi.org/10.1021/acs.jpcc.5b06777
Date Deposited: 18 Apr 2023 15:07
Last Modified: 05 Apr 2024 11:26
Cite in APA 7: Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. Journal of Physical Chemistry C, 119(37), 21732-21738. https://doi.org/10.1021/acs.jpcc.5b06777

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