Documents dont l'auteur est "Barbosa, Martin"

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Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. Lien externe

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Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. Journal of Physical Chemistry C, 119(37), 21732-21738. Lien externe

Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Erratum : Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. The Journal of Physical Chemistry C, 119(40), 23292-23292. Lien externe