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Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Martin Barbosa, F. M. B. Oliveira, Xiang Meng, Francesca Soavi, Clara Santato and Marcelo Ornaghi Orlandi

Article (2018)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/38928/
Journal Title: Journal of Materials Chemistry C (vol. 6, no. 8)
Publisher: Royal Society of Chemistry (RSC)
DOI: 10.1039/c7tc04529h
Official URL: https://doi.org/10.1039/c7tc04529h
Date Deposited: 18 Apr 2023 15:02
Last Modified: 05 Apr 2024 11:34
Cite in APA 7: Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. https://doi.org/10.1039/c7tc04529h

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