Martin Barbosa, F. M. B. Oliveira, Xiang Meng, Francesca Soavi, Clara Santato
and Marcelo Ornaghi Orlandi
Article (2018)
An external link is available for this item
| Department: | Department of Engineering Physics |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/38928/ |
| Journal Title: | Journal of Materials Chemistry C (vol. 6, no. 8) |
| Publisher: | Royal Society of Chemistry (RSC) |
| DOI: | 10.1039/c7tc04529h |
| Official URL: | https://doi.org/10.1039/c7tc04529h |
| Date Deposited: | 18 Apr 2023 15:02 |
| Last Modified: | 08 Apr 2025 07:02 |
| Cite in APA 7: | Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. https://doi.org/10.1039/c7tc04529h |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
