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Tin dioxide ion-gated transistors

Xiang Meng, Irina Valitova, Clara Santato and Fabio Cicoira

Book Section (2019)

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Department: Department of Chemical Engineering
Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/61198/
Editors: Marcelo Ornaghi Orlandi
Journal Title: Elsevier eBooks
Publisher: Elsevier BV
DOI: 10.1016/b978-0-12-815924-8.00016-5
Official URL: https://doi.org/10.1016/b978-0-12-815924-8.00016-5
Date Deposited: 17 Dec 2024 12:06
Last Modified: 17 Dec 2024 12:06
Cite in APA 7: Meng, X., Valitova, I., Santato, C., & Cicoira, F. (2019). Tin dioxide ion-gated transistors. In Orlandi, M. O. (ed.), Tin Oxide Materials (pp. 477-488). https://doi.org/10.1016/b978-0-12-815924-8.00016-5

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