Xiang Meng, Irina Valitova, Clara Santato and Fabio Cicoira
Book Section (2019)
An external link is available for this itemDepartment: |
Department of Chemical Engineering Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/61198/ |
Editors: | Marcelo Ornaghi Orlandi |
Journal Title: | Elsevier eBooks |
Publisher: | Elsevier BV |
DOI: | 10.1016/b978-0-12-815924-8.00016-5 |
Official URL: | https://doi.org/10.1016/b978-0-12-815924-8.00016-5 |
Date Deposited: | 17 Dec 2024 12:06 |
Last Modified: | 17 Dec 2024 12:06 |
Cite in APA 7: | Meng, X., Valitova, I., Santato, C., & Cicoira, F. (2019). Tin dioxide ion-gated transistors. In Orlandi, M. O. (ed.), Tin Oxide Materials (pp. 477-488). https://doi.org/10.1016/b978-0-12-815924-8.00016-5 |
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