Xiang Meng, Irina Valitova, Clara Santato
and Fabio Cicoira
Book Section (2019)
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| Department: |
Department of Chemical Engineering Department of Engineering Physics |
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| ISBN: | 9780128159248 |
| PolyPublie URL: | https://publications.polymtl.ca/61198/ |
| Editors: | Marcelo Ornaghi Orlandi |
| Journal Title: | Elsevier eBooks |
| Publisher: | Elsevier BV |
| DOI: | 10.1016/b978-0-12-815924-8.00016-5 |
| Official URL: | https://doi.org/10.1016/b978-0-12-815924-8.00016-5 |
| Date Deposited: | 17 Dec 2024 12:06 |
| Last Modified: | 17 Dec 2024 12:06 |
| Cite in APA 7: | Meng, X., Valitova, I., Santato, C., & Cicoira, F. (2019). Tin dioxide ion-gated transistors. In Orlandi, M. O. (ed.), Tin Oxide Materials (pp. 477-488). https://doi.org/10.1016/b978-0-12-815924-8.00016-5 |
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