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Documents dont l'auteur est "Meng, Xiang"

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Nombre de documents: 6

Zhang, S., Chen, Y., Liu, H., Wang, Z., Ling, H., Wang, C., Ni, J., Saltik, B. C., Wang, X., Meng, X., Kim, H.-J., Baidya, A., Ahadian, S., Ashammakhi, N., Dokmeci, M. R., Travas-Sejdic, J., & Khademhosseini, A. (2019). Room-Temperature-Formed PEDOT:PSS Hydrogels Enable Injectable, Soft, and Healable Organic Bioelectronics. Advanced Materials, 32(1), e1904752 (7 pages). Lien externe

De Oliveira Silva, G. V., Subramanian, A., Meng, X., Zhang, S., Barbosa, M. S., Baloukas, B., Chartrand, D., Pérez, J. C. G., Orlandi, M. O., Soavi, F., Cicoira, F., & Santato, C. (2019). Tungsten Oxide Ion-Gated Phototransistors using Ionic Liquid and Aqueous Gating Media. Journal of Physics D: Applied Physics, 52(30), 10 pages. Lien externe

Barbosa, M., Oliveira, F. M. B., Meng, X., Soavi, F., Santato, C., & Orlandi, M. O. (2018). Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism. Journal of Materials Chemistry C, 6(8), 1980-1987. Lien externe

Meng, X. (2017). Electrolyte-Gated Tungsten Oxide Transistors: Fabrication, Working Mechanism, Device Performance [Thèse de doctorat, École Polytechnique de Montréal]. Disponible

Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. Journal of Physical Chemistry C, 119(37), 21732-21738. Lien externe

Meng, X., Quenneville, F., Venne, F., Di Mauro, E., Işık, D., Barbosa, M., Drolet, Y., Natile, M. M., Rochefort, D., Soavi, F., & Santato, C. (2015). Erratum : Electrolyte-Gated WO₃ Transistors: Electrochemistry, Structure, and Device Performance. The Journal of Physical Chemistry C, 119(40), 23292-23292. Lien externe

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