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Tungsten Oxide Ion-Gated Phototransistors using Ionic Liquid and Aqueous Gating Media

Gabriel Vinicius De Oliveira Silva, Arunprabaharan Subramanian, Xiang Meng, Shiming Zhang, Martin Schwellberger Barbosa, Bill Baloukas, Daniel Chartrand, Juan Carlos González Pérez, Marcelo Ornaghi Orlandi, F. Soavi, Fabio Cicoira and Clara Santato

Article (2019)

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Department: Department of Chemical Engineering
Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/43266/
Journal Title: Journal of Physics D: Applied Physics (vol. 52, no. 30)
Publisher: IOP Publishing
DOI: 10.1088/1361-6463/ab1dbb
Official URL: https://doi.org/10.1088/1361-6463/ab1dbb
Date Deposited: 18 Apr 2023 15:01
Last Modified: 05 Apr 2024 11:41
Cite in APA 7: De Oliveira Silva, G. V., Subramanian, A., Meng, X., Zhang, S., Barbosa, M. S., Baloukas, B., Chartrand, D., Pérez, J. C. G., Orlandi, M. O., Soavi, F., Cicoira, F., & Santato, C. (2019). Tungsten Oxide Ion-Gated Phototransistors using Ionic Liquid and Aqueous Gating Media. Journal of Physics D: Applied Physics, 52(30), 10 pages. https://doi.org/10.1088/1361-6463/ab1dbb

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