![]() | Monter d'un niveau |
Boulais, É., Binet, V., Degorce, J.-Y., Wild, G., Savaria, Y., & Meunier, M. (2008). Thermodynamics and Transport Model of Charge Injection in Silicon Irradiated by a Pulsed Focused Laser. IEEE Transactions on Electron Devices, 55(10), 2728-2735. Lien externe
Besner, S., Degorce, J.-Y., Kabashin, A., & Meunier, M. (mai 2004). Influence of ambient medium on femtosecond laser processing of silicon [Communication écrite]. European Materials Research Society 2004 - Symposium N, Strasbourg, France. Publié dans Applied Surface Science, 247(1-4). Lien externe
Besner, S., Degorce, J.-Y., Kabashin, A., & Meunier, M. Surface Modifications During Femtosecond Laser Ablation in Vacuum, Air and Water [Communication écrite]. Photonics North 2004, Ottawa, Ontario, Canada. Lien externe
Degorce, J.-Y., Gillet, J.-N., Magny, F., & Meunier, M. (2005). Three-Dimensional Transient Temperature Field Model for Laser Annealing. Journal of Applied Physics, 97(3), 033520-1-033520-6. Lien externe
Degorce, J.-Y., Gillet, J.-N., Magny, F., & Meunier, M. (mars 2004). Three-dimensional dynamic modeling of the solid-liquid interface formed by a pulsed focused laser beam on a SiO2/Si bilayers substrate [Communication écrite]. APS March Meeting, Montréal, Québec. Non disponible
Degorce, J.-Y., Saucier, A., & Meunier, M. (juin 2002). A simple analytical method for the characterization of the melt region of a semiconductor under focused laser irradiation [Communication écrite]. European Materials Research Society conference on Physics and Chemistry of Advanced Laser Materials Processing, Strasbourg, France. Publié dans Applied Surface Science, 208-209. Lien externe
Gillet, J.-N., Degorce, J.-Y., & Meunier, M. (2009). Modeling of Three-Dimensional Diffusible Resistors With the One-Dimensional Tube Multiplexing Method. Semiconductor Science and Technology, 24(9), 11 pages. Lien externe
Gillet, J.-N., Degorce, J.-Y., & Meunier, M. (2005). General Model and Segregation Coefficient Measurement for Ultrashallow Doping by Excimer Laser Annealing. Applied Physics Letters, 86(22). Lien externe
Gillet, J.-N., Degorce, J.-Y., Liao, Y., & Meunier, M. (mars 2004). Real-time modeling of modeling of ultra-shallow doping by laser annealing for next-generation CMOS [Communication écrite]. APS March Meeting, Montréal, Québec. Non disponible
Liao, Y., Degorce, J.-Y., & Meunier, M. (2006). Laser induced formation of periodic nanostructures in silicon covered by SiO₂. Applied Physics. A, Materials Science & Processing, A82(4), 679-682. Lien externe
Meunier, M., Degorce, J.-Y., Gillet, J.-N., & Magny, F. (janvier 2004). Modeling the laser-induced diffusible resistance process [Communication écrite]. Photon processing in microelectronics and photonics III, San Jose, CA, USA. Lien externe
Meunier, M., Ducharme, M., Degorce, J.-Y., Liao, Y., & Lacourse, A. (septembre 2002). Laser Induced Local Modification of Silicon Microdevices: a New Technique for Tuning Analogue Microelectronics [Communication écrite]. International Conference on Advanced Laser Technologies (ALT 2002), Adelboden, Switzerland. Lien externe
Saucier, A., Degorce, J.-Y., & Meunier, M. (2004). Analytical Solutions of a Growth Model for a Melt Region Induced by a Focused Laser Beam. SIAM Journal on Applied Mathematics, 64(6), 2076-2095. Lien externe