Documents publiés en "2025"

Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe

Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (novembre 2025). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Gradwohl, K.-P., Cvitkovich, L., Lu, C.-H., Koelling, S., Oezkent, M., Liu, Y., Waldhör, D., Grasser, T., Niquet, Y.-M., Albrecht, M., Richter, C., Moutanabbir, O., & Martin, J. (2025). Enhanced nanoscale Ge concentration oscillations in Si/SiGe quantum well through controlled segregation [Commentaire ou lettre]. Nano Letters, 25(11), 4204-4210. Disponible

Kim, Y., Assali, S., Ge, J., Koelling, S., Luo, M., Luo, L., Joo, H.-J., Zi Jing Tan, J., Shi, X., Ikonic, Z., Li, H., Moutanabbir, O., & Nam, D. (2025). Mid-infrared group IV nanowire laser. Science Advances, 11(20), eadt6723 (7 pages). Disponible

Luo, L., Daligou, G. T. E. G., Koelling, S., Assali, S., & Moutanabbir, O. (2025). GeSn Nanowire Mid-Infrared Photodetectors and Spectrometers. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(31), 1600-1600. Lien externe

Luo, L., Vlassov, D., Atalla, M. R. M., Assali, S., Lemieux-Leduc, C., Cai, Z., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (novembre 2025). GeSn: Insights from Nanoscale Materials and Devices [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Ndiaye, E. B., Omambac, K., Koelling, S., Rahier, E., Michel, S. J., Moutanabbir, O., & Dupont-Ferrier, E. (novembre 2025). Sb Delta Doping of Isotopically Purified Epitaxial ²⁸Si for Nuclear High-Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Rahier, E., Koelling, S., Singh, S., Montpetit, L., & Moutanabbir, O. (novembre 2025). Tracking the Three-Dimensional Distribution of Growth Impurities in Cd₀.₉Zn₀.₁Te Single Crystal [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe

Singh, S., Montpetit, L., Rahier, E., Atalla, M., Koelling, S., & Moutanabbir, O. (novembre 2025). Interpixel Passivation of CZT Detectors via ALD-Deposited Al₂O₃ [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe