Documents publiés en "2025"

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Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe

Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (novembre 2025). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

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Gradwohl, K.-P., Cvitkovich, L., Lu, C.-H., Koelling, S., Oezkent, M., Liu, Y., Waldhör, D., Grasser, T., Niquet, Y.-M., Albrecht, M., Richter, C., Moutanabbir, O., & Martin, J. (2025). Enhanced nanoscale Ge concentration oscillations in Si/SiGe quantum well through controlled segregation [Commentaire ou lettre]. Nano Letters, 25(11), 4204-4210. Disponible

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Kim, Y., Assali, S., Ge, J., Koelling, S., Luo, M., Luo, L., Joo, H.-J., Zi Jing Tan, J., Shi, X., Ikonic, Z., Li, H., Moutanabbir, O., & Nam, D. (2025). Mid-infrared group IV nanowire laser. Science Advances, 11(20), eadt6723 (7 pages). Disponible

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Luo, L., Daligou, G. T. E. G., Koelling, S., Assali, S., & Moutanabbir, O. (2025). GeSn Nanowire Mid-Infrared Photodetectors and Spectrometers. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(31), 1600-1600. Lien externe

Luo, L., Vlassov, D., Atalla, M. R. M., Assali, S., Lemieux-Leduc, C., Cai, Z., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (novembre 2025). GeSn: Insights from Nanoscale Materials and Devices [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

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Ndiaye, E. B., Omambac, K., Koelling, S., Rahier, E., Michel, S. J., Moutanabbir, O., & Dupont-Ferrier, E. (novembre 2025). Sb Delta Doping of Isotopically Purified Epitaxial ²⁸Si for Nuclear High-Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

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Rahier, E., Koelling, S., Singh, S., Montpetit, L., & Moutanabbir, O. (novembre 2025). Tracking the Three-Dimensional Distribution of Growth Impurities in Cd₀.₉Zn₀.₁Te Single Crystal [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe

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Singh, S., Montpetit, L., Rahier, E., Atalla, M., Koelling, S., & Moutanabbir, O. (novembre 2025). Interpixel Passivation of CZT Detectors via ALD-Deposited Al₂O₃ [Communication écrite]. Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Yokohama, Japan (1 page). Lien externe