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Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305. Lien externe
Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. Lien externe
Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Lien externe
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5). Lien externe
