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Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. Lien externe
Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). Lien externe
Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D. J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. Lien externe
Fortin-Deschênes, M., Jacobberger, R. M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M. S., & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), e1900569 (7 pages). Lien externe
Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M. J., Botton, G. A., Guo, H., & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. Lien externe
Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Lien externe
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (mai 2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Communication écrite]. Conference on Lasers and Electro-Optics, San Jose, California. Lien externe
Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D. J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., ... De Seta, M. (septembre 2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers [Communication écrite]. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). Lien externe
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Lien externe
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25). Lien externe
Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zöllner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., ... Deschler, F. (août 2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation]. Dans Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. Lien externe
