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Documents publiés en "2001"

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Aller à : C | D | G | K | R | S | V
Nombre de documents: 13

C

Chun, J. S., Desjardins, P., Lavoie, C., Petrov, I., Cabral, C., & Greene, J. E. (2001). Interfacial Reaction Pathways and Kinetics During Annealing of 111-Textured Al-Tin Bilayers: a Synchrotron X-Ray Diffraction and Transmission Electron Microscopy Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 19(5), 2207-2216. Lien externe

Chun, J. S., Desjardins, P., Lavoie, C., Shin, C. S., Cabral, C., Petrov, I., & Greene, J. E. (2001). Interfacial Reactions in Epitaxial Al/Tin(111) Model Diffusion Barriers: Formation of an Impervious Self-Limited Wurtzite- Structure Aln(0001) Blocking Layer. Journal of Applied Physics, 89(12), 7841-7845. Lien externe

Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. Lien externe

Chun, J.-S., Desjardins, P., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. J. (2001). Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems. Thin Solid Films, 391(1), 69-80. Lien externe

D

D'Arcy-Gall, J., Gall, D., Petrov, I., Desjardins, P., & Greene, J. E. (2001). Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers. Journal of Applied Physics, 90(8), 3910-3918. Lien externe

G

Gall, D., Städele, M., Jarrendahl, K., Petrov, I., Desjardins, P., Haasch, R. T., Lee, T.-Y., & Greene, J. E. (2001). Electronic structure of ScN determined using optical spectroscopy, photoemission, andabinitio calculations. Physical review, 63(12). Lien externe

K

Kim, H., Glass, G., Desjardins, P., & Greene, J. E. (2001). Ultra-High doped Si1-xGex(001):B gas-source molecular beam epitaxy: boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics, 89(1), 194-205. Lien externe

Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2001). Temperature-modulated Si(001): as gas-source molecular beam epitaxy: growth kinetics and As incorporation. Applied Physics Letters, 79(20), 3263-3265. Lien externe

Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2001). TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies. Thin Solid Films, 392(2), 164-168. Lien externe

R

Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. A. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible

S

Shin, C.-S., Gall, D., Kim, Y.-W., Desjardins, P., Petrov, I., Greene, J. E., Odén, M., & Hultman, L. (2001). Epitaxial NaCl-structure delta-TaNx(001): electronic transport properties, elastic modulus, and hardness vs. N/Ta ratio. Journal of Applied Physics, 90(6), 2879-2895. Lien externe

V

Veres, T., Cai, M., Cochrane, R. W., Rouabhi, M., Roorda, S., & Desjardins, P. (2001). MeV Si+ irradiation of Ni/Fe multilayers: structural, transport, and magnetic properties. Thin Solid Films, 382(1-2), 172-182. Lien externe

Veres, T., Desjardins, P., Cochrane, R. W., Cai, M., Rouabhi, M., Cheng, L., Abdouche, R., & Sutton, M. (2001). Mev Si+ Irradiation of Fe/Ni Bilayers: Influence of Microstructural and Interfacial Changes on Magnetic Properties. Thin Solid Films, 382(1-2), 164-171. Lien externe

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