 | Monter d'un niveau |
Ababou, Y., Desjardins, P., Masut, R. A., Yelon, A., & L'Espérance, G. (1996). Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111). Canadian Journal of Physics, 74(1), S108-S111. Lien externe
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. A. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R. A., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Cléton, F., Sieber, B., Bensaada, A., Masut, R. A., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845. Lien externe
Cléton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R. A., Bonard, J. M., Ganière, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836. Lien externe
Cleton, F., Sieber, B., Masut, R. A., Isnard, L., Bonard, J. M., & Ganiere, J. D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734. Lien externe
Cliche, L., Roorda, S., Kajrys, G. E., & Masut, R. A. (1996). A comparison of annealing kinetics in crystalline and amorphous InP. Journal of Applied Physics, 79(4), 2142-2144. Lien externe
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. A. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. Lien externe
Singh, A., Masut, R. A., & Bensaada, A. (septembre 1994). Characterization of interface states in thin epitaxial film In₀.₇₅Ga₀.₂₅P/Ag diodes [Communication écrite]. Surfaces, vacuum and their applications. Publié dans AIP Conference Proceedings, 378(1). Lien externe
Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (avril 1996). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Communication écrite]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. Lien externe
Zhao, Y. G., Jing, R., Zou, Y. H., Xia, Z. J., Huang, X. L., Chen, W. X., & Masut, R. A. (1996). Alloy composition dependence of photoexcited carrier dynamics in GaₓIn₁−ₓP/InP:Fe (x<0.18). Applied Physics Letters, 68(5), 696-698. Lien externe
