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Documents dont le centre de recherche est "GCM - Groupe de recherche en physique et technologie des couches minces"

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Nombre de documents: 9

D

Desjardins, P., Izquierdo, R., & Meunier, M. (1993). Diode laser induced chemical vapor deposition of WSiₓ on TiN from WF₆ and SiH₄. Journal of Applied Physics, 73(10), 5216-5216. Lien externe

H

Holländer, A., Czeremuszkin, G., Sapieha, J.-E., & Wertheimer, M. R. (août 1993). The effect of surface composition on the bond strength of corona and low pressure plasma treated polyethylene [Communication écrite]. 11th International Symposium on Plasma Chemistry (ISPC 1993), Loughborough, UK. Lien externe

L

Lecours, A., Izquierdo, R., Tabbal, M., Meunier, M., & Yelon, A. (1993). Laser induced deposition of tungsten on GaAs from WF₆. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 11(1), 51-54. Lien externe

Leonelli, R., Tran, C. A., Brebner, J. L., Graham, J., Tabti, R., Masut, R. A., & Charbonneau, S. (1993). Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP. Physical review. B, Condensed matter, 48(15), 11135-11143. Lien externe

M

Martinu, L., Raveh, A., Boutard, D., Houle, S., Poitras, D., Vella, N., & Wertheimer, M. R. (1993). Properties and stability of diamond-like carbon films related to bonded and unbonded hydrogen. Diamond and Related Materials, 2(5), 673-677. Lien externe

R

Raveh, A., Martinu, L., Hawthorne, H. M., & Wertheimer, M. R. (1993). Mechanical and tribological properties of dual-frequency plasma-deposited diamond-like carbon. Surface and Coatings Technology, 58(1), 45-55. Lien externe

Reinke, P., Raveh, A., Sapieha, J.-E., & Martinu, L. (août 1993). Modification of interfaces in the growth of diamond by MW/RF plasma [Communication écrite]. 11th International Symposium on Plasma Chemistry (ISPC 1993), Loughborough, UK. Lien externe

S

Singh, A., Cova, P., & Masut, R. A. (1993). Energy density distribution of interface states in Au Schottky contacts to epitaxial In₀.₂₁Ga₀.₇₉As:Zn layers grown on GaAs by metalorganic vapor phase epitaxy. Journal of Applied Physics, 74(11), 6714-6719. Lien externe

W

Wertheimer, M. R., & Moisan, M. (août 1993). Processing of electronic materials by microwave plasma [Communication écrite]. 11th International Symposium on Plasma Chemistry (ISPC 1993), Loughborough, UK. Lien externe

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