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Documents dont l'auteur est "Béland, Laurent Karim"

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Nombre de documents: 13

B

Béland, L. K., Machado-Charry, E., Pochet, P., & Mousseau, N. (2014). Strain effects and intermixing at the Si surface: Importance of long-range elastic corrections in first-principles calculations. Physical Review B, 90(15), 155302 (10 pages). Lien externe

Brommer, P., Béland, L. K., Joly, J.-F., & Mousseau, N. (2014). Understanding long-time vacancy aggregation in iron: A kinetic activation-relaxation technique study. Physical Review B, 90(13), 134109 (9 pages). Lien externe

Béland, L. K., & Mousseau, N. (2013). Long-time relaxation of ion-bombarded silicon studied with the kinetic activation-relaxation technique: Microscopic description of slow aging in a disordered system. Physical Review B, 88(21), 214201 (9 pages). Lien externe

Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). Lien externe

Béland, L. K., Brommer, P., El-Mellouhi, F., Joly, J.-F., & Mousseau, N. (2011). Kinetic activation-relaxation technique. Physical Review E, 84(4), 046704 (11 pages). Lien externe

G

Ganster, P., Béland, L. K., & Mousseau, N. (2012). First stages of silicon oxidation with the activation relaxation technique. Physical Review B, 86(7), 075408 (7 pages). Lien externe

J

Joly, J.-F., Béland, L. K., Brommer, P., & Mousseau, N. (2013). Contribution of vacancies to relaxation in amorphous materials: A kinetic activation-relaxation technique study. Physical Review B, 87(14), 144204 (6 pages). Lien externe

Joly, J.-F., Béland, L. K., Brommer, P., El-Mellouhi, F., & Mousseau, N. (juin 2011). Optimization of the Kinetic Activation-Relaxation Technique, an off-lattice and self-learning kinetic Monte-Carlo method [Communication écrite]. High Performance Computing Symposium 2011, Montréal, Canada. Publié dans Journal of Physics: Conference Series, 341. Lien externe

M

Mousseau, N., Brommer, P., Joly, J.-F., Béland, L. K., El-Mellouhi, F., N'tsouaglo, G. K., Restrepo, O. A., & Trochet, M. (2015). Following atomistic kinetics on experimental timescales with the kinetic Activation-Relaxation Technique. Computational Materials Science, 100, 111-123. Lien externe

Mousseau, N., Béland, L. K., Brommer, P., Joly, J.-F., El-Mellouhi, F., Machado-Charry, E., Marinica, M.-C., & Pochet, P. (2012). The activation-relaxation technique: ART nouveau and kinetic ART. Journal of Atomic, Molecular, and Optical Physics, 2012, 1-14. Disponible

Mousseau, N., Machado-Charry, E., Béland, L. K., Caliste, D., Genovese, L., Deutsch, T., & Pochet, P. (2011). Optimized energy landscape exploration using the ab initio based activation-relaxation technique. Journal of Chemical Physics, 135(3), 034102 (11 pages). Lien externe

P

Perez, D., Béland, L. K., Deryng, D., Lewis, L. J., & Meunier, M. (2008). Numerical Study of the Thermal Ablation of Wet Solids by Ultrashort Laser Pulses. Physical Review B, 77(1). Lien externe

T

Trochet, M., Béland, L. K., Brommer, P., Joly, J.-F., & Mousseau, N. (2015). Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method. Physical Review B, 91(22), 224106 (12 pages). Lien externe

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