Long-time relaxation of ion-bombarded silicon studied with the kinetic activation-relaxation technique: Microscopic description of slow aging in a disordered system

Laurent Karim Béland and Normand Mousseau

Article (2013)

Document published while its authors were not affiliated with Polytechnique Montréal

An external link is available for this item

Research Center:	RQMP - Regroupement québécois sur les matériaux de pointe
PolyPublie URL:	https://publications.polymtl.ca/41380/
Journal Title:	Physical Review B (vol. 88, no. 21)
Publisher:	American Physical Society
DOI:	10.1103/physrevb.88.214201
Official URL:	https://doi.org/10.1103/physrevb.88.214201
Date Deposited:	18 Apr 2023 15:09
Last Modified:	08 Apr 2025 07:05

Cite in APA 7:	Béland, L. K., & Mousseau, N. (2013). Long-time relaxation of ion-bombarded silicon studied with the kinetic activation-relaxation technique: Microscopic description of slow aging in a disordered system. Physical Review B, 88(21), 214201 (9 pages). https://doi.org/10.1103/physrevb.88.214201
APA 7 (HTML)ASCII CitationAtomBibTeXDOIsDublin CoreEndNote (.ENW)MARC (ISO 2709/UTF-8) (.MRC)MARC (UTF-8) (.MRK8)MARC XMLMPEG-21 DIDLMultiline CSVOAI-ORE Resource Map (Atom Format)OPENAIREOpenURL ContextObjectOpenURL ContextObject in SpanRDF+N-TriplesRDF+N3RDF+XMLReferReference Manager (.RIS)Simple Metadata

Statistics

Dimensions

Repository Staff Only

View Item