Mickaël Trochet, Laurent Karim Béland, Peter Brommer, Jean-François Joly and Normand Mousseau
Article (2015)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this item
| PolyPublie URL: | https://publications.polymtl.ca/41383/ |
|---|---|
| Journal Title: | Physical Review B (vol. 91, no. 22) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevb.91.224106 |
| Official URL: | https://doi.org/10.1103/physrevb.91.224106 |
| Date Deposited: | 18 Apr 2023 15:07 |
| Last Modified: | 25 Sep 2024 16:27 |
| Cite in APA 7: | Trochet, M., Béland, L. K., Brommer, P., Joly, J.-F., & Mousseau, N. (2015). Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method. Physical Review B, 91(22), 224106 (12 pages). https://doi.org/10.1103/physrevb.91.224106 |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
