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Documents dont l'auteur est "Trochet, Mickaël"

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Nombre de documents: 8

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López, P., Ruiz, D. C., Santos, I., Aboy, M., Marqués, L. A., Trochet, M., Mousseau, N., & Pelaz, L. (février 2017). Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique [Communication écrite]. Spanish Conference on Electron Devices (CDE 2017), Barcelona, Spain. Lien externe

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Mahmoud, S., Trochet, M., Restrepo, O. A., & Mousseau, N. (2018). Study of point defects diffusion in nickel using kinetic activation-relaxation technique. ACTA Materialia, 144(Supplement), 679-690. Lien externe

Mousseau, N., Brommer, P., Joly, J.-F., Béland, L. K., El-Mellouhi, F., N'tsouaglo, G. K., Restrepo, O. A., & Trochet, M. (2015). Following atomistic kinetics on experimental timescales with the kinetic Activation-Relaxation Technique. Computational Materials Science, 100, 111-123. Lien externe

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Restrepo, O. A., Mousseau, N., Trochet, M., El-Mellouhi, F., Bouhali, O., & Becquart, C. S. (2018). Carbon diffusion paths and segregation at high-angle tilt grain boundaries in α-Fe studied by using a kinetic activation-relation technique. Physical Review B, 97(5), 054309. Lien externe

Restrepo, O. A., Mousseau, N., El-Mellouhi, F., Bouhali, O., Trochet, M., & Becquart, C. S. (2016). Diffusion properties of Fe-C systems studied by using kinetic activation-relaxation technique. Computational Materials Science, 112, Part, 96-106. Lien externe

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Trochet, M., Sauvé-Lacoursière, A., & Mousseau, N. (2017). Algorithmic developments of the kinetic activation-relaxation technique: Accessing long-time kinetics of larger and more complex systems. Journal of Chemical Physics, 147(15), 152712. Lien externe

Trochet, M., & Mousseau, N. (2017). Energy landscape and diffusion kinetics of lithiated silicon: A kinetic activation-relaxation technique study. Physical Review B, 96(13), 134118. Lien externe

Trochet, M., Béland, L. K., Brommer, P., Joly, J.-F., & Mousseau, N. (2015). Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method. Physical Review B, 91(22), 224106 (12 pages). Lien externe

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