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Items where Author is "Trochet, Mickaël"

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Number of items: 8.

L

López, P., Ruiz, D. C., Santos, I., Aboy, M.́., Marqués, L. A., Trochet, M., Mousseau, N., & Pelaz, L. (2017, February). Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique [Paper]. Spanish Conference on Electron Devices (CDE 2017), Barcelona, Spain. External link

M

Mahmoud, S., Trochet, M., Restrepo, O. A., & Mousseau, N. (2018). Study of point defects diffusion in nickel using kinetic activation-relaxation technique. ACTA Materialia, 144(Supplement), 679-690. External link

Mousseau, N., Brommer, P., Joly, J.-F., Béland, L. K., El-Mellouhi, F., N'tsouaglo, G. K., Restrepo, Ó. A., & Trochet, M. (2015). Following atomistic kinetics on experimental timescales with the kinetic Activation-Relaxation Technique. Computational Materials Science, 100, 111-123. External link

R

Restrepo, O. A., Mousseau, N., Trochet, M., El-Mellouhi, F., Bouhali, O., & Becquart, C. S. (2018). Carbon diffusion paths and segregation at high-angle tilt grain boundaries in α-Fe studied by using a kinetic activation-relation technique. Physical Review B, 97(5), 054309. External link

Restrepo, Ó. A., Mousseau, N., El-Mellouhi, F., Bouhali, O., Trochet, M., & Becquart, C. S. (2016). Diffusion properties of Fe-C systems studied by using kinetic activation-relaxation technique. Computational Materials Science, 112, Part, 96-106. External link

T

Trochet, M., Sauvé-Lacoursière, A., & Mousseau, N. (2017). Algorithmic developments of the kinetic activation-relaxation technique: Accessing long-time kinetics of larger and more complex systems. Journal of Chemical Physics, 147(15), 152712. External link

Trochet, M., & Mousseau, N. (2017). Energy landscape and diffusion kinetics of lithiated silicon: A kinetic activation-relaxation technique study. Physical Review B, 96(13), 134118. External link

Trochet, M., Béland, L. K., Brommer, P., Joly, J.-F., & Mousseau, N. (2015). Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method. Physical Review B, 91(22), 224106 (12 pages). External link

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