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Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si

Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau and François Schiettekatte

Article (2013)

Document published while its authors were not affiliated with Polytechnique Montréal

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PolyPublie URL: https://publications.polymtl.ca/41403/
Journal Title: Physical Review Letters (vol. 111, no. 10)
Publisher: American Physical Society
DOI: 10.1103/physrevlett.111.105502
Official URL: https://doi.org/10.1103/physrevlett.111.105502
Date Deposited: 18 Apr 2023 15:09
Last Modified: 05 Apr 2024 11:38
Cite in APA 7: Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). https://doi.org/10.1103/physrevlett.111.105502

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