Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau
and François Schiettekatte
Article (2013)
Document published while its authors were not affiliated with Polytechnique Montréal
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| PolyPublie URL: | https://publications.polymtl.ca/41403/ |
|---|---|
| Journal Title: | Physical Review Letters (vol. 111, no. 10) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevlett.111.105502 |
| Official URL: | https://doi.org/10.1103/physrevlett.111.105502 |
| Date Deposited: | 18 Apr 2023 15:09 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). https://doi.org/10.1103/physrevlett.111.105502 |
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