Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean-François Joly, Jean-Christophe Pothier, Laurent J. Lewis, Normand Mousseau and François Schiettekatte
Article (2013)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this itemPolyPublie URL: | https://publications.polymtl.ca/41403/ |
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Journal Title: | Physical Review Letters (vol. 111, no. 10) |
Publisher: | American Physical Society |
DOI: | 10.1103/physrevlett.111.105502 |
Official URL: | https://doi.org/10.1103/physrevlett.111.105502 |
Date Deposited: | 18 Apr 2023 15:09 |
Last Modified: | 05 May 2023 15:46 |
Cite in APA 7: | Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). https://doi.org/10.1103/physrevlett.111.105502 |
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