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Béland, L. K., Anahory, Y., Smeets, D., Guihard, M., Brommer, P., Joly, J.-F., Pothier, J.-C., Lewis, L. J., Mousseau, N., & Schiettekatte, F. (2013). Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si. Physical Review Letters, 111(10), 105502 (5 pages). Lien externe
Bulatov, V., Colombo, L., Cléri, F., Lewis, L. J., & Mousseau, N. (édit.) (2001). Advances in materials theory and modeling: bridging over multiple length and time scale. Lien externe
Boisvert, G., Mousseau, N., & Lewis, L. J. (1998). Surface diffusion coefficients by thermodynamic integration: Cu on Cu(100). Physical Review B, 58(19), 12667-12670. Lien externe
Boisvert, G., Lewis, L. J., & Yelon, A. (1995). Many-body nature of the Meyer-Neldel compensation law for diffusion. Physical Review Letters, 75(3), 469-472. Lien externe
El-Mellouhi, F., Mousseau, N., & Lewis, L. J. (2008). Kinetic activation-relaxation technique: An off-lattice self-learning kinetic Monte Carlo algorithm. Physical Review B, 78(15), 153202 (4 pages). Lien externe
Kerrache, A., Mousseau, N., & Lewis, L. J. (2011). Amorphous silicon under mechanical shear deformations: Shear velocity and temperature effects. Physical Review B, 83(13), 134122. Lien externe
Kerrache, A., Mousseau, N., & Lewis, L. J. (2011). Crystallization of amorphous silicon induced by mechanical shear deformations. Physical Review B, 84(1), 014110 (7 pages). Lien externe
Lefèvre, A., Lewis, L. J., Martinu, L., & Wertheimer, M. R. (2011). Structural and vibrational properties of silicon dioxide thin films densified by medium-energy particles bombardment. MRS Proceedings, 677. Lien externe
Lorazo, P., Lewis, L. J., & Meunier, M. (mars 2002). A combined molecular-dynamics and Monte-Carlo approach to the simulation of picosecond laser ablation of silicon [Communication écrite]. APS March Meeting, Indianapolis, IN. Non disponible
Lewis, L. J., & Mousseau, N. (1998). Tight-binding molecular-dynamics studies of defects and disorder in covalently bonded materials. Computational Materials Science, 12(3), 210-241. Lien externe
Lewis, L. J., Mousseau, N., & Drolet, F. (novembre 1988). Computer-generated structural models for a-Si:H [Communication écrite]. Symposium T: Atomic Scale Calculations in Materials Science, Boston, Mass.. Lien externe
Malek, R., Mousseau, N., & Barkema, G. T. (avril 2001). Characterization of the Activation-Relaxation Technique : Recent Results on Models of Amorphous Silicon [Communication écrite]. Symposium AA: Advances in Materials Theory and Modeling-Bridging Over Multiple-Length and Time Scales, San Francisco, Calif.. Lien externe
Mousseau, N., & Lewis, L. J. (1997). Structural, electronic, and dynamical properties of amorphous gallium arsenide: A comparison between two topological models. Physical Review B, 56(15), 9461-9468. Lien externe
Mousseau, N., & Lewis, L. J. (1997). Topology of amorphous tetrahedral semiconductors on intermediate length scales. Physical Review Letters, 78(8), 1484-1487. Lien externe
Mousseau, N., & Lewis, L. J. (1991). Dynamical models of hydrogenated amorphous silicon. Physical Review B, 43(12), 9810-9817. Lien externe
Mousseau, N., & Lewis, L. J. (1990). Computer models for amorphous silicon hydrides. Physical Review B, 41(6), 3702-3707. Lien externe
