Patrick Ganster, Laurent Karim Béland and Normand Mousseau
Article (2012)
Document published while its authors were not affiliated with Polytechnique Montréal
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| PolyPublie URL: | https://publications.polymtl.ca/41378/ |
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| Journal Title: | Physical Review B (vol. 86, no. 7) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevb.86.075408 |
| Official URL: | https://doi.org/10.1103/physrevb.86.075408 |
| Date Deposited: | 18 Apr 2023 15:10 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | Ganster, P., Béland, L. K., & Mousseau, N. (2012). First stages of silicon oxidation with the activation relaxation technique. Physical Review B, 86(7), 075408 (7 pages). https://doi.org/10.1103/physrevb.86.075408 |
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