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An, Q., Moutanabbir, O., & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. Lien externe
Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells . Dans CLEO: Science and Innovations 2021, San Jose, California, United States. Publié dans Conference on Lasers and Electro-Optics, 56. Lien externe
Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). Lien externe
Fettu, G., Sipe, J. E., Moutanabbir, O., Agio, M., Soci, C., & Sheldon, M. T. (août 2021). Optical injection of spin current in direct bandgap GeSn [Présentation]. Dans SPIE Nanoscience + Engineering, San Diego, California, United States. Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (mars 2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Communication écrite]. Novel In-Plane Semiconductor Lasers XX. Lien externe
Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Lien externe
Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages). Lien externe
Moutanabbir, O., & Fortin-Deschênes, M. (2021). (Invited) Two-Dimensional Pnictogens: Van Der Waals Growth, Stability, and Phase Transformation. ECS Meeting Abstracts, MA2021-01(14), 655-655. Lien externe
Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Lien externe
Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 075429 (7 pages). Lien externe
Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). Lien externe
