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Documents publiés en "1989"

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Nombre de documents: 8

Article de revue

Bekkay, T., Izquierdo, R., St-Denis, M., Sacher, E., & Yelon, A. (1989). The presence of silane gas in plasma-deposited hydrogenated amorphous silicon. Surface Science, 222(2-3), L831-L836. Lien externe

Izquierdo, R., Sacher, E., & Yelon, A. (1989). X-ray photoelectron spectra of antimony oxides. Applied Surface Science, 40(1-2), 175-177. Lien externe

Lu, Z. H., Azelmad, A., Trudeau, Y., & Yelon, A. (1989). Damage profile of ion-implanted GaAs by x-ray photoelectron spectroscopy. Applied Physics Letters, 55(9), 846-848. Lien externe

Lu, Z., Lagarde, C., Sacher, E., Currie, J. F., & Yelon, A. (1989). A surface analytical study of GaAs(100) cleaning procedures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, 7(3), 646-650. Lien externe

Lu, Z., Sacher, E., Selmani, A., & Yelon, A. (1989). Supersaturated substitutional Ga+ ion implanted in silicon studied by x-ray photoelectron spectroscopy. Applied Physics Letters, 54(26), 2665-2667. Lien externe

Sacher, E., Currie, J. F., & Yelon, A. (1989). Electronegativity effects in chemical sputtering. Surface Science, 220(1), L679-L686. Lien externe

Savadogo, O., & Yelon, A. (1989). Photocorrosion of hydrogenated amorphous silicon: effect of the solvent. Lien externe

Communication écrite

Rabiller, P., Sapieha, J.-E., Wertheimer, M. R., & Yelon, A. (juillet 1989). Electrical properties of a-SiOₓNy :H films prepared by microwave PECVD [Communication écrite]. 3rd International Conference on Conduction and Breakdown in Solid Dielectrics, Trondheim, Norway. Lien externe

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