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Documents dont l'auteur est "Sundararaman, Chetlur S."

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Nombre de documents: 8

Currie, J. F., & Sundararaman, C. S. (1999). Field effect devices. (Brevet no US5986291). Lien externe

Sundararaman, C. S. (1993). Self-aligned insulated gate FET technology for InP : an interface engineering approach [Thèse de doctorat, Polytechnique Montréal]. Disponible

Meyyappan, M., McLane, G. F., Cole, M. W., Laraeu, R., Namaroff, M., Sasserath, J. N., & Sundararaman, C. S. (1992). Magnetron etching of GaAs: Etch characteristics and surface characterization. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, 10(4), 1147-1151. Lien externe

Leonelli, R., Sundararaman, C. S., & Currie, J. F. (1991). Response to "Comment on 'Photoluminescence study of sulfide layers on p-tynpe InP'" [Commentaire ou lettre]. Applied Physics Letters, 59(14), 1796-1797. Lien externe

Sundararaman, C. S., Lafontaine, H., Poulin, S., Mouton, A., & Currie, J. F. (1991). Reactive sputtering of InP in N₂ and N₂/O₂ plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, 9(3), 1433-1439. Lien externe

Leonelli, R., Sundararaman, C. S., & Currie, J. F. (1990). Photoluminescence study of sulfide layers on p-type InP. Applied Physics Letters, 57(25), 2678-2679. Lien externe

Mouton, A., Sundararaman, C. S., Lafontaine, H., Poulin, S., & Currie, J. F. (1990). Etching of InP by H₃PO₄, H₂O₂ Solutions. Japanese Journal of Applied Physics, 29(10R), 1912-1913. Lien externe

Sundararaman, C. S., Mouton, A., & Currie, J. F. (avril 1990). Chemical etching of InP [Communication écrite]. International Conference on Indium Phosphide and Related Materials, Denver, CO, USA. Publié dans International Conference on Indium Phosphide and Related Materials. Lien externe

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