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Items where Author is "Scappucci, Giordano"

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Number of items: 5.

K

Koelling, S., Stehouwer, L. E. A., Paquelet Wuetz, B., Scappucci, G., & Moutanabbir, O. (2023). Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces. Advanced Materials: Interfaces, 10(3), 2201189. External link

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020, October). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. External link

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Published in ECS Transactions, 98(5). External link

L

Losert, M. P., Wuetz, B. P., Koelling, S., Stehouwer, L., Zwerver, A.-M. J., Philips, S. G., Madzik, M. G., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M. G., & Scappucci, G. (2022, March). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations [Paper]. 2022 APS March Meeting, Chicago, Illinois. External link

P

Paquelet Wuetz, B., Losert, M. P., Koelling, S., Stehouwer, L. E. A., Zwerver, A.-M. J., Philips, S. G. J., Mądzik, M. T., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vandersypen, L. M. K., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M., & Scappucci, G. (2022). Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications, 13(1), 7730 (8 pages). External link

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