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Documents dont l'auteur est "Hémeryck, Anne"

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Aller à : 2024 | 2022 | 2020 | 2018 | 2017
Nombre de documents: 6

2024

Gunde, M., Jay, A., Poberžnik, M., Salles, N., Richard, N., Landa, G., Mousseau, N., Martin-Samos, L., & Hémeryck, A. (2024). Exploring potential energy surfaces to reach saddle points above convex regions. The Journal of Chemical Physics, 160(23), 232501 (13 pages). Lien externe

2022

Jay, A., Gunde, M., Salles, N., Poberžnik, M., Martin-Samos, L., Richard, N., de Gironcoli, S., Mousseau, N., & Hémeryck, A. (2022). Activation–Relaxation Technique: An efficient way to find minima and saddle points of potential energy surfaces. Computational Materials Science, 209, 111363 (9 pages). Lien externe

2020

Jarrin, T., Jay, A., Raine, M., Mousseau, N., Hémeryck, A., & Richard, N. (2020). Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage Structure. IEEE Transactions on Nuclear Science, 67(7), 1273-1283. Lien externe

2018

Jay, A., Hémeryck, A., Richard, N., Martin-Samos, L., Raine, M., Le Roch, A., Mousseau, N., Goiffon, V., Paillet, P., Gaillardin, M., & Magnan, P. (2018). Simulation of Single-Particle Displacement Damage in Silicon. Part III: First Principle Characterization of Defect Properties. IEEE Transactions on Nuclear Science, 65(2), 724-731. Lien externe

2017

Jay, A., Raine, M., Richard, N., Mousseau, N., Goiffon, V., Hémeryck, A., & Magnan, P. (2017). Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure. IEEE Transactions on Nuclear Science, 64(1), 141-148. Lien externe

Salles, N., Richard, N., Mousseau, N., & Hémeryck, A. (2017). Strain-driven diffusion process during silicon oxidation investigated by coupling density functional theory and activation relaxation technique. Journal of Chemical Physics, 147(5), 054701 (9 pages). Lien externe

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