Nicholas Salles, Nicholas Richard, Normand Mousseau and Anne Hemeryck
Article (2017)
An external link is available for this itemDepartment: | Department of Mathematics and Industrial Engineering |
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PolyPublie URL: | https://publications.polymtl.ca/41322/ |
Journal Title: | Journal of Chemical Physics (vol. 147, no. 5) |
Publisher: | American Institute of Physics |
DOI: | 10.1063/1.4996206 |
Official URL: | https://doi.org/10.1063/1.4996206 |
Date Deposited: | 18 Apr 2023 15:04 |
Last Modified: | 05 Apr 2024 11:38 |
Cite in APA 7: | Salles, N., Richard, N., Mousseau, N., & Hemeryck, A. (2017). Strain-driven diffusion process during silicon oxidation investigated by coupling density functional theory and activation relaxation technique. Journal of Chemical Physics, 147(5), 054701 (9 pages). https://doi.org/10.1063/1.4996206 |
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