Simulation of Single-Particle Displacement Damage in Silicon. Part III: First Principle Characterization of Defect Properties

Antoine Jay, Anne Hémeryck, Nicolas Richard, Layla Martin-Samos, Mélanie Raine, Alexandre Le Roch, Normand Mousseau, Vincent Goiffon, Philippe Paillet, Marc Gaillardin and Pierre Magnan

Article (2018)

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Department:	Department of Mathematics and Industrial Engineering
PolyPublie URL:	https://publications.polymtl.ca/41468/
Journal Title:	IEEE Transactions on Nuclear Science (vol. 65, no. 2)
Publisher:	IEEE
DOI:	10.1109/tns.2018.2790843
Official URL:	https://doi.org/10.1109/tns.2018.2790843
Date Deposited:	18 Apr 2023 15:03
Last Modified:	25 Sep 2024 16:27

Cite in APA 7:	Jay, A., Hémeryck, A., Richard, N., Martin-Samos, L., Raine, M., Le Roch, A., Mousseau, N., Goiffon, V., Paillet, P., Gaillardin, M., & Magnan, P. (2018). Simulation of Single-Particle Displacement Damage in Silicon. Part III: First Principle Characterization of Defect Properties. IEEE Transactions on Nuclear Science, 65(2), 724-731. https://doi.org/10.1109/tns.2018.2790843
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