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Documents dont l'auteur est "Cahill, D. G."

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Aller à : 2011 | 2002 | 2001 | 2000 | 1997
Nombre de documents: 6

2011

Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6). Lien externe

2002

Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. A. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe

2001

Kodambaka, S., Petrova, V., Vailionis, A., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2001). TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies. Thin Solid Films, 392(2), 164-168. Lien externe

2000

Kodambaka, S., Petrova, V., Vailionis, P., Desjardins, P., Cahill, D. G., Petrov, I., & Greene, J. E. (2000). In-situ high-temperature scanning tunneling microscopy studies of two-dimensional island decay kinetics on atomically flat smooth TiN(001). Surface Review and Letters, 7(05n06), 589-593. Lien externe

Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. Lien externe

1997

Karr, B. W., Petrov, I., Desjardins, P., Cahill, D. G., & Greene, J. E. (1997). In situ scanning tunneling microscopy studies of the evolution of surface morphology ans microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering. Surface and Coatings Technology, 94-95, 403-408. Lien externe

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